The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.

以沿[110]晶向切割的近本征硅单晶为样品，通过研究样品对连续波固体激光器所产生的1.3 μm的近红外光的双光子吸收所诱导的光电流对入射光偏振方向的依赖关系，研究了双光子吸收的各向异性.测得了硅单晶对该波长的光的三阶极化率张量χ(3)的各向异性系数为-0.25，两个独立分量的比值χxxxx/χxxyy的幅度为2.4，并基于前期工作所得的χxxyy的结果，进而确定了另一分量χxxxx的值大约为1.49×10-19 m2/V2.

Different electro-optic effects, such as Kerr effect, Pockels effect induced by the electric field or strain, and plasma dispersion effect exist in silicon. Experimentally distinguishing these effects is necessary for designing silicon-based electro-optic devices. According to their different polarization dependencies and frequency responses, these effects are measured and distinguished successfully via a transverse electro-optic modulation experiment based on the near-intrinsic silicon sample. The results indicate that Pockels effect induced by the electric field or strain is primary among these effects in the near-intrinsic silicon sample.

The transverse electro-optic (EO) modulation system is built based on cubic boron nitride (cBN) single crystals unintentionally doped and synthesized at a high pressure and high temperature. The photoelectric output of the system includes two parts that can be measured respectively and the value of elements in the linear EO tensor of the cBN crystal can be obtained. This method does not need to measure the absolute light intensity. All of the surfaces of the tiny cBN crystals whose hardness is next to the hardest diamonds are {111} planes. The rectangular parallelepiped cBN samples are obtained by cleaving along {110} planes and subsequently grinding and polishing f112g planes of the tiny octahedral cBN flakes. Three identical non-zero elements of the EO tensor of the cBN crystal are measured via two sample configurations, and the measured results are very close, about 3.68 and 3.95 pm/V, respectively, which are larger than the linear EO coefficients of the general III-V compounds.

对于微小尺寸的N型宽禁带立方氮化硼(CBN)半导体晶体, 在施加恒稳电场的情况下, 观察到电致发光现象。 通过置CBN单晶样品于光栅单色仪抛物面反射镜焦点的方法, 对于CBN的蓝紫光辐射获得了测试系统的最大入射光通量和理想的信噪比。 在350～450 nm波长范围内, CBN加上4.7×106 V?cm-1恒稳电场条件下, 测量出立方氮化硼的蓝紫光发射光谱。同时, 结合基于第一性原理的GGA方法计算出的立方氮化硼能带结构和电子态密度, 以及测量得到的非线性j-E关系和电击穿特性, 讨论了发光机理。 提出了在雪崩击穿前的缺陷偶极子极化和击穿后, 产生大量的激发态电子, 电子在Γ能谷和X能谷间迁移的发光机制。Cubic Boron Nitride Crystal

Diamonds are wide-gap semiconductors possessing excellent physical and chemical properties; thus, they are regarded as very appropriate materials for optoelectronic devices. Based on the Kerr effect, we introduce a simple and feasible method for measuring the third-order nonlinear optical susceptibility of synthetic diamonds. In the experiments, synthetic type I diamond samples and transverse electro-optic modulation systems are utilized. As for the laser with the wavelength of 650 nm, the third-order susceptibility and Kerr coefficient of the diamond samples are obtained at χ⁽³⁾₁₂₁₂=2:17×10^-23 m²=V² and S₄₄= 1.93×10^-23 m²=V², respectively.

从经典的极化理论出发, 分析了直流电场、低频调制电场和光波电场共同存在时硅材料折射率的变化, 从理论上揭示了场致线性电光效应的物理实质。以近本征硅材料为样品, 采用金属-绝缘体-半导体样品结构, 搭建了由塞纳蒙(Senarmont)补偿器改进成的横向电光调制系统。在硅材料空间电荷区内观测到显著的线性电光调制效应, 系统的半波电压小于170 V, 从实验上直接证实了硅材料中内建电场诱导的场致线性电光效应的存在。此外还观测到由克尔效应引起的二次电光调制信号, 以及由场致光整流效应引起的、随线偏振光的方位角的二倍余弦变化的电信号。实验结果与经典极化理论的预期完全一致, 也间接证实了硅材料中场致线性电光效应的存在。